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TEMPERATURE COMPENSATED PIEZOELECTRIC CRYSTAL OSCILLATOR GK256-UTK-M

TEMPERATURE COMPENSATED PIEZOELECTRIC CRYSTAL OSCILLATOR GK256-UTK-M

Temperature compensated piezoelectric crystal oscillator GK256-UTK-M manufactured as per KPGF.433531.035 TU, DIL-8 package

Basic parameters

  • Nominal frequency range, MHz 1,5 - 150
  • LWH, mm 12,6х12,6х4,8
  • Interconnection technique PCD pad mounting
  • Форма сигнала CMOS, Sine
  • Quality category “QCD”

Number and pin assignment

  • 1 Frequency tuning
  • 2 General
  • 3 Output
  • 4 Power supply
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Overrall dimensions

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GK256-UTK-M - Dimensions
GK256-UTK-M
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Model identification code: GK256-UTK-M-AG-A3-30М-3.3C KPGF.433531.035 TU

Oscillator type GK256-UTK-M
Operating temperature range А
Temperature instability of frequency within operating temperature range G
Load capacitance, sinusoidal output А
Spurious resonance rejection (for sinusoidal output only) 3
Nominal frequency, MHz 30М
Supply voltage, V 3,3
Output (S – sinusoidal, CMOS – no sign) С

Electrical parameter

Parameter Value
Nominal frequency range, MHz 1,5 - 150
Adjustment accuracy, х10-6 ± 1
Frequency tuning, х10-6, min. ± 5*
Control voltage, V 1,65±0,01
Output parameters:
wave form Sinusoidal
Peak-to-peak voltage, V, min. 1,0
Spectral density of phase noise at 1 kHz offset, dB/Hz, max -130
wave form CMOS
Logic ‘1’, V min. 0,9 Us
Logic ‘0’, V max. 0,1 Us
Pulse ratio, % max. 50 ± 5
Rise/fall time, ns, max 3
Supply voltage, V 2,7 ± 5 %; 3,0 ± 5 %; 3,3 ± 5 %;
Output voltage vs. load deviation ±20 % , ×10-6, max. ± 5
Load coefficient ± 20 % , ×10-6, max. ± 0,2
Load capacitance:
CMOS 15±20% pF
Supply current (sine), mA, max:
fnom ≤ 20 MHz 2
fnom > 20 MHz 4
Supply current (CMOS), mA, max:
fnom ≤ 20 MHz 9
fnom > 20 MHz 24

Load capacitance, sinusoidal output

10±20% kOhm, 10±20% pF No sign
50 Ohm (А)
1 kOhm (B)
5 kOhm (V)

Spurious resonance rejection, dB

Not rated (1)
- 20 (2)
- 30 (3)
- 40 (4)
- 50 (5)
- 60 (6)

Impact resistance to external factors action

Mechanical impact resistance М6 Group, GOST 25467
Climatic impact resistance UKhL 2.1 cat., GOST 25467
Leak-proof construction
γ-percentile time to failure at γ = 95 % under standard operating conditions (at ambient temperature of 85 °С) for min. 20 000 h within 15 years of service life
γ-percentile storageability time – min. 15 years with γ = 95 %

Notes:

1. * - To be specified depending on nominal frequency. 2. Load and spurious resonance rejection values for CMOS are not specified.

Temperature instability of frequency within operating temperature range, х10-6

Operating temperature range, ˚С Temperature instability of frequency within operating temperature range, х10-6
± 0,1 (V) ± 0,14 (V1) ± 0,28 (V2) ± 0,3 (V3) ± 0,5 (G) ± 1,0 (D) ± 1,5 (G1) ± 2,0 (D1) ± 2,5 (Е) ± 3,0 (Е1) ± 5,0 (Zh) ± 7,5 (Zh1) ± 10,0 (I)
0…+50 (L) + + + + + + + + + + + + +
0…+70 (К) + + + + + + + + + + + + +
-10…+60 (А) - + + + + + + + + + + + +
-30…+60 (Е) - - + + + + + + + + + + +
-30…+70 (P) - - + + + + + + + + + + +
-30…+85 (R) - - - + + + + + + + + + +
-40…+70 (B) - - - + + + + + + + + + +
-40…+85 (S) - - - + + + + + + + + + +
-60…+85 (G) - - - - - - - - - - + + +

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